PWM Control Circuit – TL494

The TL494 incorporates all the functions required in the construction of a pulse-width-modulation (PWM) control circuit on a single chip. Designed primarily for power-supply control, this device offers the flexibility to tailor the power-supply control circuitry to a specific application.

PWM Control Circuit – TL494

  • Complete PWM Power-Control Circuitry
  • Uncommitted Outputs for 200-mA Sink or Source Current
  • Output Control Selects Single-Ended or Push-Pull Operation
  • Internal Circuitry Prohibits Double Pulse at Either Output
  • Variable Dead Time Provides Control Over Total Range
  • Internal Regulator Provides a Stable 5-V Reference Supply With 5% Tolerance
  • Circuit Architecture Allows Easy Synchronization

PWM Control Circuit - TL494

The TL494 contains two error amplifiers, an on-chip adjustable oscillator, a dead-time control (DTC) comparator, a pulse-steering control flip-flop, a 5-V, 5%-precision regulator, and output-control circuits.

TL494 Related Links

SG2525 – SG3525 – PWM SMPS Regulator Chip

SG2525 – SG3525 – PWM SMPS Regulator Chip. A second generation ic switch mode controller optimized for high frequency.

100kHz Half Bridge Convertor – SG3525

The SG3525A pulse width modulator control circuit offers improved performance and lower external parts count when implemented for controlling all types of switching power supplies. The on-chip +5.1 V reference is trimmed to +/-1% and the error amplifier has an input common-mode voltage range that includes the reference voltage, thus eliminating the need for external divider resistors. Half Bridge, Push-Pull.

SG3525 usage in SMPS 500W – It was used in Parallel for Electroplating with a central Load sharing control between modules.

SG2525 - SG3525 - PWM SMPS Regulator Chip

Specs

  • 8.0 V to 35 V Operation
  • 5.1 V +/- 1.0% Trimmed Reference
  • 100 Hz to 400 kHz Oscillator Range
  • Separate Oscillator Sync Pin
  • Adjustable Deadtime Control
  • Input Undervoltage Lockout
  • Latching PWM to Prevent Multiple Pulses
  • Pulse-by-Pulse Shutdown
  • Dual Source/Sink Outputs: +/- 400 mA Peak

Circuits –

Power Electronics Section

Here are power supply, inverter, drives, chargers and high current equipment diagrams and links. There are Mosfet and Thyristor circuits too.

Power Electronics Section

Power Supplies, Inverters, UPS, Chargers, Electro Plating, Precision Welding-erosion, Coating Metals and many other Processes are made of high current circuits. Even in measurement of parameters like Micro-Ohm high currents are involved. Electronic Circuits are required in such products to give control to time, current, frequency and voltage in order to accomplish with the required precision a process or job.

Power Electronics Section - delabs
In any power equipment, efficiency and reduction of bulk is crucial so SMPS and high frequency control is an important part of this domain. These products also generate EMI-RFI. Product Safety Study is also vital.

The Power Circuits Section has been updated.

The MOSFET in Power Electronics

delabs Notes – In a Circuit Module, if all Power and Signal Polarities are reversed. All NPN to PNP, All N-Channel to P-Channel and Vice Versa. All Diodes and Caps too turned around. This Topsy Turvy or Mirror Design ought to work in Theory. It has worked for some circuits in practice too in my experience. ?

Some believe that N-Channel is more Robust than the P Type. In Bipolar Transistor NPN is more trusted for the final output stages. The NPN Transistor and N-Channel turn-on by a Positive control bias. It may be inappropriate to say this mosfet is NPN or PNP.

The MOSFET in Power Electronics

The traditional metal–oxide–semiconductor (MOS) structure is obtained by growing a layer of silicon dioxide (SiO2) on top of a silicon substrate and depositing a layer of metal or polycrystalline silicon (the latter is commonly used). As the silicon dioxide is a dielectric material, its structure is equivalent to a planar capacitor, with one of the electrodes replaced by a semiconductor.

If the MOSFET is an n-channel or nMOS FET, then the source and drain are “n+” regions and the body is a “p” region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are “p+” regions and the body is a “n” region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that flow through the channel; similarly, the drain is where the charge carriers leave the channel. MOSFET – Wikipedia

This application note discusses the breakdown voltage, on-resistance, transconductance, threshold voltage, diode forward voltage, power dissipation, dynamic characteristics, gate charge and dV/dt capability of the power MOSFET.
Application Note AN-1084 Power MOSFET Basics – IRF

A MOSFET is a transistor. It is a Metal Oxide Field Effect Transistor. Here are the symbols for FETs and MOSFETs: The MOSFET How the MOSFET works

The conductivity of the path from Source to drain is controlled by applying a voltage between the gate and the body of the semiconductor. N-channel enhancement MOSFET

See this simple circuit that explains everything
n-channel MOSFET switch – George Watson, Univ. of Delaware, 1996.